Electrical properties and defects of a large variety of semiconductor materials, devices and dielectric materials can be investigated contactless and destruction free with a family of new characterisation methods.

No sample preparation is needed.

There are no restrictions on the sample shape or size starting with nano material powders, rocks up to 12" wafers.

Seemingly all semiconductors on the market can be investigated. Starting with a varity of electronic grade- and multicristalline silicon. Due do the high sensitivity even the quality of a large variety of thin epitaxial layers and strained silicon can be characterised. Work is carried out on GaAs, InP, SiC, GaN, Ge and other compound semiconductors. The list is constantly expanded. So far few limitations are known.

Measurement systems

MDP -> Microwave Detected Photoconductivity
MD - PICTS -> Microwave Detected Photo Induced Current Transient Spectroscopy